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| savantic semiconductor product specification silicon npn power transistors 2SC3317 description with to-220c package high voltage,high speed switching high reliability applications switching regulators ultrasonic generators high frequency inverters general purpose power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i b base current 2 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 3.13 /w
savantic semiconductor product specification 2 silicon npn power transistors 2SC3317 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; i b =0 400 v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i b =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 1.0 v v besat base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =500v ;i e =0 1 ma i ebo emitter cut-off current v eb =7v; i c =0 1 ma h fe dc current gain i c =2a ; v ce =5v 10 switching times t on turn-on time 0.50 s t stg storage time 1.50 s t f fall time i c =2.5ai b1 =0.5a; i b2 =-1a;r l =60 a pw=20s ;duty b 2% 0.15 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3317 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC3317 |
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